Low Turn-Off Loss Shorted-Anode IGBT with Multiple p+/n Collector

نویسندگان

چکیده

In this study, after numerical simulation, a novel snapback-free Shorted-Anode Insulated Gate Bipolar Transistor (SA-IGBT) with Multiple p+/n Collector is proposed and investigated. This structure consists of P+ pillars located on the side collector. The provide high carrier injection efficiency increase anode resistance during turn-on transient, eliminate snapback phenomenon, above all, they also extract holes turn-off process. results in better performance between Eoff Vce multiple collector (MPC) SA-IGBT advantageous for loss. When MPC have same forward voltage drop, reduces loss by 25%.

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ژورنال

عنوان ژورنال: Journal of Physics: Conference Series

سال: 2021

ISSN: ['1742-6588', '1742-6596']

DOI: https://doi.org/10.1088/1742-6596/1907/1/012037